Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action

WANG Zexiao; YE Linzheng; ZHU Xijing; LIU Yao; CHUAI Shida; LV Boyang; WANG Dong

doi:10.13394/j.cnki.jgszz.2023.0273

Volume 45 Issue 1

Mar. 2025

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Article Navigation > Diamond & Abrasives Engineering > 2025 > 45(1): 102-112

WANG Zexiao, YE Linzheng, ZHU Xijing, LIU Yao, CHUAI Shida, LV Boyang, WANG Dong. Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action[J]. Diamond & Abrasives Engineering, 2025, 45(1): 102-112. doi: 10.13394/j.cnki.jgszz.2023.0273

Citation:

WANG Zexiao, YE Linzheng, ZHU Xijing, LIU Yao, CHUAI Shida, LV Boyang, WANG Dong. Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action[J]. Diamond & Abrasives Engineering, 2025, 45(1): 102-112. doi: 10.13394/j.cnki.jgszz.2023.0273

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Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action

doi: 10.13394/j.cnki.jgszz.2023.0273

WANG Zexiao^{1, 2},
YE Linzheng^{1, 2
,
,},
ZHU Xijing^{1, 2},
LIU Yao^{1, 2},
CHUAI Shida^{1, 2},
LV Boyang^{1, 2},
WANG Dong³

1.
College of Mechanical Engineering, North University of China, Taiyuan 038507, China
2.
Shanxi Key Laboratory of Advanced Manufacturing Technology, Taiyuan 038507, China
3.
Department of Engineering, Faculty of Environment, Science and Economy, University of Exeter, Exeter EX4 4QF, UK

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Received Date: 2023-12-15
Accepted Date: 2024-03-18
Rev Recd Date: 2024-03-06

Available Online: 2024-06-21

Abstract

Abstract

Objectives Silicon carbide faces challenges such as low polishing efficiency and poor surface quality during processing. The ultrasonic-assisted CMP (UCMP) processing technology is used to smooth and non-destructive polishing the SiC surface, and the influence of ultrasonic assistance on the CMP flow field is deeply investigated in order to improve the polishing effect of SiC. Methods (1) COMSOL Multiphysics is used to conduct CFD simulation on the polishing flow field of the silicon carbide UCMP process, aiming to explore the influences of factors such as ultrasonic frequency, ultrasonic amplitude, and liquid film thickness on the polishing flow field. A model is constructed to study the polishing flow field characteristics under ultrasonic vibration, based on an achievable k−ε model to analyze the polishing flow field characteristics under ultrasonic action. (2) The influences of ultrasonic frequency, ultrasonic amplitude, and liquid film thickness on velocity and pressure in the polishing flow field are studied by the finite element method. (3) The CMP and UCMP comparative experiments are conducted to compare the polishing effects of SiC wafers under the two processes. Results The ultrasonic frequency has a significant impact on the flow field of the polishing solution, and it has a significant promoting effect on the flow field of the polishing solution. As the ultrasound frequency increases from 20 kHz to 40 kHz, the maximum velocity of the flow field increases from 324.10 m/s to 698.20 m/s, and the maximum pressure increases from 177.00 MPa to 1580.00 MPa. Compared with CMP, the polishing quality of the SiC wafer after UCMP is better, with a minimum surface roughness R_a of 3.2 nm and a higher material removal rate of 324.23 nm/h. Conclusions The UCMP process is used to process the SiC surface, and the positive effect of ultrasound-assisted polishing flow field is verified through theoretical analysis and experimental verification. The relationship between the ultrasonic frequency and the polishing flow field characteristics has been clarified, providing data support for further optimizing UCMP process parameters. The UCMP process has significant advantages in improving the polishing quality and material removal rate of SiC, and is expected to be widely applied in the field of silicon carbide material processing. Further research can be conducted on the influence of other factors on the UCMP process effect to achieve more ideal processing results.
- ultrasound assisted,
- silicon carbide,
- fluid dynamics simulation,
- chemical mechanical polishing(CMP)

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References(33)

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Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action

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