Analysis of low-temperature CVD growth process of diamond films in C-H-F atmosphere

JIAN Xiaogang; LIANG Xiaowei; YAO Wenshan; ZHANG Yi; ZHANG Binhua; CHEN Zhe; CHEN Maolin

doi:10.13394/j.cnki.jgszz.2023.0069

Volume 44 Issue 1

Feb. 2024

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JIAN Xiaogang, LIANG Xiaowei, YAO Wenshan, ZHANG Yi, ZHANG Binhua, CHEN Zhe, CHEN Maolin. Analysis of low-temperature CVD growth process of diamond films in C-H-F atmosphere[J]. Diamond & Abrasives Engineering, 2024, 44(1): 15-21. doi: 10.13394/j.cnki.jgszz.2023.0069

Citation:

JIAN Xiaogang, LIANG Xiaowei, YAO Wenshan, ZHANG Yi, ZHANG Binhua, CHEN Zhe, CHEN Maolin. Analysis of low-temperature CVD growth process of diamond films in C-H-F atmosphere[J]. Diamond & Abrasives Engineering, 2024, 44(1): 15-21. doi: 10.13394/j.cnki.jgszz.2023.0069

Citation:

JIAN Xiaogang, LIANG Xiaowei, YAO Wenshan, ZHANG Yi, ZHANG Binhua, CHEN Zhe, CHEN Maolin. Analysis of low-temperature CVD growth process of diamond films in C-H-F atmosphere[J]. Diamond & Abrasives Engineering, 2024, 44(1): 15-21. doi: 10.13394/j.cnki.jgszz.2023.0069

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Analysis of low-temperature CVD growth process of diamond films in C-H-F atmosphere

doi: 10.13394/j.cnki.jgszz.2023.0069

School of Mechanical and Energy Engineering, Tongji University, Shanghai 201804, China

More Information

Received Date: 2023-03-21
Rev Recd Date: 2023-05-11

Available Online: 2024-03-15

Abstract

Abstract

To better understand the growth mechanism of diamond films via low-temperature chemical vapor deposition in a C-H-F atmosphere, this paper employed density functional theory based on first principle. It calculated the adsorption energy, reaction heat, and reaction energy barrier of H and F atoms undergoing extraction reactions on the hydrogen-terminated diamond surface. Additionally, the analysis included the adsorption of CF₃, CF₂, and CF growth groups on the active site substrate. The results show that compared with H atoms, F atoms are more likely to extract H from the surface of hydrogen terminated diamond and desorb it in the form of HF. This process is advantageous for generating more active sites at low temperatures in a C-H-F atmosphere. Both the structure and the absolute value of the adsorption energy of CF₃, CF₂, and CF groups are more favorable for the generation of the diamond phase after adsorption. Increasing the concentration of CF₃, CF₂, and CF growth groups appropriately can facilitate the growth of diamond phase at a higher rate.
- CVD diamond film,
- fluorine,
- deposition mechanism,
- first-principles,
- adsorption,
- surface chemical reaction

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References(23)

References

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