Experimental study on synthesis of single crystal diamond by hot filament chemical vapor deposition method

ZHANG Chuan; LIU Dongdong; LU Ming; SUN Fanghong

doi:10.13394/j.cnki.jgszz.2023.0101

Volume 44 Issue 3

Jun. 2024

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Article Navigation > Diamond & Abrasives Engineering > 2024 > 44(3): 279-285

ZHANG Chuan, LIU Dongdong, LU Ming, SUN Fanghong. Experimental study on synthesis of single crystal diamond by hot filament chemical vapor deposition method[J]. Diamond & Abrasives Engineering, 2024, 44(3): 279-285. doi: 10.13394/j.cnki.jgszz.2023.0101

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ZHANG Chuan, LIU Dongdong, LU Ming, SUN Fanghong. Experimental study on synthesis of single crystal diamond by hot filament chemical vapor deposition method[J]. Diamond & Abrasives Engineering, 2024, 44(3): 279-285. doi: 10.13394/j.cnki.jgszz.2023.0101

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Experimental study on synthesis of single crystal diamond by hot filament chemical vapor deposition method

doi: 10.13394/j.cnki.jgszz.2023.0101

School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

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Received Date: 2023-05-04
Accepted Date: 2023-08-07
Rev Recd Date: 2023-07-24

Available Online: 2024-06-28

Abstract

Abstract

The deposition area of the hot filament chemical vapor deposition (HFCVD) method can reach 12 inches, which has the potential to produce larger-sized single crystal diamonds. In this study, single crystal diamond with a size of 3 mm × 3 mm × 1 mm and (100) orientation was used as the substrate. Homoepitaxial growth was carried out using the HFCVD method with methane and hydrogen as precursors, and a small amount of nitrogen gas. The results show that under the conditions of a filament temperature of 2200 °C, a carbon source concentration of 4%, and a chamber pressure of 4 kPa, single crystal diamond grows at a rate of 3.41 μm/h. The surface of the diamond exhibits no defects such as polycrystals, cracks, or holes. The full width half maximum (FWHM) of the epitaxial layer’s X-ray diffraction spectrum at the (400) peak is 0.11°, which is lower than that of the substrate at 0.16°, indicating that the crystal quality of the epitaxial layer is higher than that of the substrate. The introduction of nitrogen can increase the growth rate of single crystal diamond, although it reduces the crystal quality of the epitaxial layer. A higher nitrogen concentration can also shift the growth mode of single crystal diamond change to island growth.
- hot filament chemical vapor deposition,
- single crystal diamond,
- optimization of deposition parameters,
- nitrogen doping

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References(16)

References

[1]	HUO D, CHENG K. Experimental investigation on micro-milling of oxygen-free, high-conductivity copper using tungsten carbide, chemistry vapor deposition, and single-crystal diamond micro tools [J]. Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture,2010,224(6):995-1003. doi: 10.1243/09544054JEM1828SC
[2]	DONATO N, ROUGER N, PERNOT J, et al. Diamond power devices: state of the art, modelling, figures of merit and future perspective [J]. Journal of Physics D: Applied Physics,2019,53(9):093001.
[3]	KOBAYASHI M I, YOSHIHASHI S, YAMANISHI H, et al. Thermal neutron measurement capability of a single crystal cvd diamond detector near the Reactor Core Region of UTR-KINKI [J]. Plasma and Fusion Research,2022,17:2405045-2405045. doi: 10.1585/pfr.17.2405045
[4]	陆太进. 钻石鉴定和研究的进展 [J]. 宝石和宝石学杂志,2010,12(4):1-5,62.
[5]	TALLAIRE A, ACHARD J, SILVA F, et al. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges [J]. Comptes Rendus Physique,2013,14(2/3):169-184. doi: 10.1016/j.crhy.2012.10.008
[6]	李廷垟, 刘繁, 翁俊, 等. MPCVD高功率外延生长单晶金刚石均匀性研究 [J]. 表面技术,2023(5):278-287. LI Tingyang, LIU Fan, WENG Jun, et al. Homogeneity of single crystal diamond under epitaxial growth by MPCVD high power [J]. Surface Technology,2023(5):278-287.
[7]	SHIOMI H, TANABE K, NISHIBAYASHI Y, et al. Epitaxial growth of high quality diamond film by the microwave plasma-assisted chemical-vapor-deposition method [J]. Japanese journal of applied physics,1990,29(1R):34. doi: 10.1143/JJAP.29.34
[8]	BAUER T, SCHRECK M, STERNSCHULTE H, et al. High growth rate homoepitaxial diamond deposition on off-axis substrates [J]. Diamond and related materials,2005,14(3/4/5/6/7):266-271. doi: 10.1016/j.diamond.2004.10.043
[9]	LIANG Q, YAN C, LAI J, et al. Large area single-crystal diamond synthesis by 915 MHz microwave plasma-assisted chemical vapor deposition [J]. Crystal growth & design,2014,14(7):3234-3238.
[10]	ASMUSSEN J, GROTJOHN T A, SCHUELKE T, et al. Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis [J]. Applied physics letters,2008,93(3):031502. doi: 10.1063/1.2961016
[11]	SCHÄFER L, HÖFER M, KRÖGER R. The versatility of hot-filament activated chemical vapor deposition [J]. Thin Solid Films,2006,515(3):1017-1024. doi: 10.1016/j.tsf.2006.07.073
[12]	AUCIELLO O. Science and technology of a transformational multifunctional ultrananocrystalline diamond (UNCDTM) coating [J]. Functional Diamond,2022,2(1):1-24. doi: 10.1080/26941112.2022.2033606
[13]	ZHANG T, WANG L, SUN F, et al. The effect of boron doping on the morphology and growth rate of micron diamond powders synthesized by HFCVD method [J]. Diamond and related materials,2013,40:82-88. doi: 10.1016/j.diamond.2013.10.008
[14]	OHMAGARI S, YAMADA H, UMEZAWA H, et al. Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition [J]. Diamond and related materials,2014,48:19-23. doi: 10.1016/j.diamond.2014.06.001
[15]	OHMAGARI S, SRIMONGKON K, YAMADA H, et al. Low resistivity p + diamond (100) films fabricated by hot-filament chemical vapor deposition [J]. Diamond and Related Materials,2015,58:110-114. doi: 10.1016/j.diamond.2015.06.011
[16]	OHMAGARI S, YAMADA H, UMEZAWA H, et al. Growth and characterization of freestanding p + diamond (100) substrates prepared by hot-filament chemical vapor deposition [J]. Diamond and Related Materials,2018,81:33-37. doi: 10.1016/j.diamond.2017.11.003

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