CN 41-1243/TG ISSN 1006-852X
Volume 41 Issue 3
Jun.  2021
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CHEN Zibin, GE Mengran, BI Wenbo, ZHANG Chenzheng, GE Peiqi. Study on crack initiation scratching depth of monocrystalline silicon[J]. Diamond & Abrasives Engineering, 2021, 41(3): 55-59. doi: 10.13394/j.cnki.jgszz.2021.3.0008
Citation: CHEN Zibin, GE Mengran, BI Wenbo, ZHANG Chenzheng, GE Peiqi. Study on crack initiation scratching depth of monocrystalline silicon[J]. Diamond & Abrasives Engineering, 2021, 41(3): 55-59. doi: 10.13394/j.cnki.jgszz.2021.3.0008

Study on crack initiation scratching depth of monocrystalline silicon

doi: 10.13394/j.cnki.jgszz.2021.3.0008
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  • Rev Recd Date: 2021-05-10
  • Available Online: 2022-04-06
  • As a typical brittle material, the key to achieve the plastic domain processing of monocrystalline silicon is to make the cutting depth less than the crack initiation cutting depth. In this experiment, the fracture strength theory is used to establish a method to calculate the initiation scratching depth of radial crack, median crack and lateral crack for monocrystalline silicon scratching processing. The crack initiation scratching depth and scratch depth are calculated. The experimental device for high-speed scratching monocrystalline silicon with a Berkovich indenter is designed, and the scratch depth of the radial crack initiation is measured in the scratching experiment. The calculated values of the scratch depth at radial crack initiation are in good agreement with the experimental measurements.

     

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