单晶SiC基片干式摩擦化学机械抛光初探

薛明普; 肖文; 李宗唐; 王占奎; 苏建修

doi:10.13394/j.cnki.jgszz.2023.0052

单晶SiC基片干式摩擦化学机械抛光初探

doi: 10.13394/j.cnki.jgszz.2023.0052

河南科技学院机电学院, 河南新乡 453003

详细信息

作者简介:
薛明普，男，1995年生，硕士。主要研究方向：精密与超精密加工。E-mail：xmp5790@163.com

通讯作者:
苏建修，男，1963年生，博士、教授、博士生导师。主要研究方向：精密加工与特种加工。E-mail：dlutsu2004@126.com

中图分类号: O786; TQ163.4; TG58
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出版历程
- 收稿日期: 2023-03-06
- 修回日期: 2023-04-07
- 录用日期: 2023-04-20
- 刊出日期: 2024-02-20

Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates

School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, Henan, China

摘要

摘要: 针对碳化硅（SiC）基片在抛光过程中效率低、费用高、环境污染大等问题，提出了一种在干式状态下对SiC基片进行摩擦化学机械抛光的方法（dry tribochemical mechanical polishing, DTCMP）。探究不同工艺参数（磨料种类、磨粒粒径、磨粒含量、抛光盘转速、抛光载荷、固相氧化剂含量）对单晶SiC基片抛光效率和表面质量的影响规律。研究结果表明：金刚石磨粒更适合SiC的摩擦化学机械抛光；当磨粒粒径为W1，磨粒质量为4 g，抛光盘转速为70 r/min，抛光载荷为20.685 kPa，固相氧化剂过碳酸钠添加量为10 g时，其为最优工艺参数。采用最优工艺参数对表面粗糙度约为20 nm的单晶6H-SiC基片进行干式抛光加工，最终获得表面粗糙度R_a为3.214 nm。DTCMP方法抛光SiC基片比水基抛光法热量损失少，所产生的界面温度更高，反应所需的活化能更低，可以实现SiC基片的绿色、高效和高质量抛光。
- SiC基片 /
- 干式摩擦化学机械抛光 /
- 材料去除率 /
- 表面粗糙度
Abstract: Aiming at the issues of low efficiency, high cost, and environmental pollution associated with silicon carbide (SiC) substrates in the polishing process, a method of tribochemical mechanical polishing of SiC substrates in the dry state (Dry Tribochemical Mechanical Polishing, DTCMP) is proposed. The effect of different process parameters (abrasive type, abrasive size, abrasive content, polishing plate speed, polishing load, solid phase oxidant content) on the polishing efficiency and surface quality of single-crystal silicon carbide substrates was investigated. The results show that diamond abrasive is more suitable for the tribochemical mechanical polishing of silicon carbide. Optimal test parameters are achieved when the abrasive size is W1, the abrasive content is 4 g, the polishing plate speed is 70 r/min, the polishing load is 20.685 kPa, and the solid phase oxidant sodium percarbonate is added at 10 g. Single-crystal 6H-SiC substrates with a surface roughness of approximately 20 nm were polished using the optimal process parameters, finanlly resulting in a surface roughness of R_a of 3.214 nm. The DTCMP method for polishing SiC substrate has less heat loss than water-based polishing method, enabling higher interface temperature and lower activation energy required for reactions. This method can realize green, efficient and high-quality polishing of SiC substrates.
- SiC substrate /
- dry tribochemical mechanical polishing /
- material removal rate /
- surface roughness

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图 1 摩擦化学机械抛光装置

Figure 1. Tribochemical mechanical polishing device

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图 2 SiC基片抛光前后的表面形貌

Figure 2. Surface morphology before and after SiC polishing

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图 3 磨粒粒径对MRR和R_a的影响

Figure 3. Effect of abrasive particle size on MRR and R_a

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图 4 不同磨粒粒径抛光SiC基片后的表面形貌

Figure 4. Surface morphology after polishing SiC with different abrasive sizes

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图 5 磨粒含量对SiC基片抛光效果的影响

Figure 5. Effect of abrasive content on the polishing effect of SiC substrate

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图 6 固相氧化剂含量对MRR和R_a的影响

Figure 6. Effect of solid oxidant content on MRR and R_a

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图 7 不同固相氧化剂含量下抛光SiC基片后的表面形貌

Figure 7. Surface morphology of polished SiC with different content of solid oxidant

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图 8 抛光载荷对MRR和R_a的影响

Figure 8. Effect of polishing load on MRR and R_a

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图 9 抛光盘转速对MRR和R_a的影响

Figure 9. Effect of polishing plate speed on MRR and R_a

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图 10 优化结果后的表面形貌

Figure 10. Surface morphology after optimization

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图 11 单晶SiC基片的干式摩擦化学机械抛光原理

Figure 11. Mechanism of dry tribochemical mechanical polishing of SiC

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表 1 加工工艺参数

Table 1. Processing parameters

参数	类型和取值
抛光机	ZYP230
抛光垫	聚氨酯抛光垫
磨料类型	金刚石、氧化铝
磨粒粒径 d / μm	0.35，1.00，3.50，7.00
磨粒质量m₁ / g	2，4，6，8
氧化剂	Na₂CO₃-1.5H₂O₂
固相氧化剂质量m₂ / g	0，5，10，15，20
抛光载荷P/ kPa	6.895，13.790，20.685，27.580
抛光盘转速v/ (r·min⁻¹)	50，60，70，80
抛光时间t/ min	30

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