以Cr/CrSiN膜为过渡层在高钴硬质合金表面沉积金刚石薄膜

潘秋丽; 张荣良

doi:10.13394/j.cnki.jgszz.2023.0004

以Cr/CrSiN膜为过渡层在高钴硬质合金表面沉积金刚石薄膜

doi: 10.13394/j.cnki.jgszz.2023.0004

浙江百川导体技术股份有限公司, 浙江浦江 322200

基金项目: 浙江省重点研发资助项目（2021C01083）

详细信息

作者简介:
潘秋丽，女，1986年生，工程师。主要研究方向：表面处理和复合材料。E-mail：panqiuli@baichuanchina.com

中图分类号: TQ164; TG70
计量
- 文章访问数: 264
- HTML全文浏览量: 98
- PDF下载量: 24
- 被引次数: 0
出版历程
- 收稿日期: 2023-01-04
- 修回日期: 2023-04-18
- 录用日期: 2023-04-27
- 网络出版日期: 2023-05-07
- 刊出日期: 2023-12-01

Depositing diamond film on high Co content cemented carbide using CrSiN film as an interlayer

Zhejiang Baichuan Conductor Technology Co., Ltd., Pujiang 322200, Zhejiang, China

摘要

摘要:
为了解决在高钴硬质合金表面难以生长高结合力金刚石薄膜的问题，采用Cr/CrSiN膜为过渡层，用热丝化学气相沉积法在硬质合金上沉积纳米金刚石薄膜（NCD）、亚微晶金刚石薄膜（SMCD）和微晶金刚石薄膜（MCD），并对其结合力进行研究。结果表明：采用Cr/CrSiN过渡层可在高钴硬质合金表面沉积出结合力优异的金刚石薄膜，NCD的结合力最优，SMCD的结合力次之，MCD的结合力最差；当金刚石薄膜晶粒变大时，因金刚石薄膜韧性变差且过渡层碳化严重，金刚石薄膜的结合力变弱。
- 金刚石薄膜 /
- 硬质合金 /
- 结合力 /
- 应力
Abstract:
In order to solve the problem that it is difficult to grow diamond films with high binding force on the surface of high cobalt cemented carbide, the Cr/CrSiN film was used as the transition layer, and the nanocrystalline diamond films (NCD), the submicrocrystalline diamond films (SMCD) and the microcrystalline diamond films (MCD) were deposited on the cemented carbide by hot filament chemical vapor deposition method, and their binding forces were studied. The results show that the Cr/CrSiN transition layer can be used to deposit diamond films with excellent bonding strength on the surface of high cobalt cemented carbide. NCD has the best binding force, followed by SMCD, and MCD has the worst binding force. When the grain size of the diamond film increases, the bonding forces of the diamond film weaken due to the poor toughness of the diamond films and severe carbonization of the transition layer. When the crystal size of the diamond film increases, the binding force of the diamond film becomes weak due to the poor toughness of the diamond film and serious carbonization of the transition layer.
- diamond film /
- cemented carbide /
- bonding force /
- stress

HTML全文

图 1 NCD、SMCD和MCD样品的表面SEM图

Figure 1. Surface SEM images of NCD, SMCD and MCD samples

下载: 全尺寸图片幻灯片

图 2 3个样品的截面图

Figure 2. Cross sections of three samples

下载: 全尺寸图片幻灯片

图 3 3个样品上金刚石薄膜的Raman图谱

Figure 3. Raman spectra of diamond film on three samples

下载: 全尺寸图片幻灯片

图 4 3种样品上的Rockwell压痕图

Figure 4. Rockwell indentation on three samples

下载: 全尺寸图片幻灯片

图 5 3个样品的划痕SEM图、MCD中的A区放大图及其B点的EDS图

Figure 5. SEM images of scratches on three samples, enlarged images of area A and EDS images of point B in MCD

下载: 全尺寸图片幻灯片

图 6 3个样品的GIXRD图谱

Figure 6. GIXRD patterns of three samples

下载: 全尺寸图片幻灯片

表 1 3种样品中过渡层各部分的元素成分

Table 1. Element compositions of transition layer for three samples at different places

元素	原子质量分数 ω / %
	NCD			SMCD			MCD
	上	中	下	上	中	下	上	中	下
C	94.2	44.2	25.6	95.5	58.6	44.6	95.0	61.5	50.4
Cr	5.5	42.2	47.3	4.3	26.8	36.1	0.4	25.1	28.9
N	0.0	11.7	24.9	0.1	13.8	17.6	4.4	12.4	19.2
Si	0.3	1.9	2.2	0.1	0.8	1.7	0.2	1.0	1.5

下载: 导出CSV

参考文献(23)

[1]	梅沢三造. 硬质合金刀具常识及使用方法 [M]. 北京: 机械工业出版社, 2009. UMEZAWA Sanzo. General knowledge and instruction of cemented carbide cutting tools [M]. Beijing: China Machine Press, 2009.
[2]	孙宝琦, 何平. 模具用硬质合金及其进展 [J]. 模具工业,1996(12):3-7. doi: 10.16787/j.cnki.1001-2168.dmi.1996.12.001 SUN Baoqi, HE Ping. Cemented carbide for a mould and its development [J]. Die & Mould Industry,1996(12):3-7. doi: 10.16787/j.cnki.1001-2168.dmi.1996.12.001
[3]	孔维星, 巩春志, 田修波. 微细硬质合金刀具沉积金刚石薄膜的形核研究 [J]. 真空与低温,2019,25(3):170-177. doi: 10.3969/j.issn.1006-7086.2019.03.004 KONG Weixing, GONG Chunzhi, TIAN Xiubo. Nucleation research of diamond films on tiny hard alloy milling cutters [J]. Vacuum & Cryogenics,2019,25(3):170-177. doi: 10.3969/j.issn.1006-7086.2019.03.004
[4]	王云, 谢小豪, 汪艳亮, 等. 硬质合金刀具涂层的研究进展 [J]. 有色金属科学与工程,2019,10(1):60-66. doi: 10.13264/j.cnki.ysjskx.2019.01.010 WANG Yun, XIE Xiaohao, WANG Yanliang, et al. Latest progress in the preparation of cemented carbide tool coatings [J]. Nonferrous Metals Science and Engineering,2019,10(1):60-66. doi: 10.13264/j.cnki.ysjskx.2019.01.010
[5]	CHANDRAN M, HOFFMAN A. Diamond film deposition on WC-Co and steel substrates with a CrN interlayer for tribological applications [J]. Journal of Physics D: Applied Physics,2016,49(21):213002.
[6]	PENG J H, ZENG J W, XIAO Y, et al. Novel conversion annealing pretreatment for improved deposition of diamond coatings onto WC-Co cemented carbide [J]. Journal of Alloys and Compounds,2022,893:1-12.
[7]	ZHENG K, GAO J, HEI H J, et al. Design and fabrication of HfC, SiC/HfC and HfC-SiC/HfC interlayers for improving the adhesion between diamond coatings and cemented carbides [J]. Journal of Alloys and Compounds,2020,815:1-8.
[8]	XU F, XU J H, YUEN M F, et al. Adhesion improvement of diamond coatings on cemented carbide with high cobalt content using PVD interlayer [J]. Diamond and Related Materials,2013,34:70-75. doi: 10.1016/j.diamond.2013.01.012
[9]	POLINI R, BARLETTA M. On the use of CrN/Cr and CrN interlayers in hot filament chemical vapour deposition (HF-CVD) of diamond films onto WC-Co substrates [J]. Diamond and Related Materials,2008,17(3):325-335. doi: 10.1016/j.diamond.2007.12.059
[10]	HEI H, SHEN Y, MA J, et al. Effect of substrate temperature on SiC interlayers for diamond coatings deposition on WC-Co substrates [J]. Vacuum,2014,109:15-20. doi: 10.1016/j.vacuum.2014.06.001
[11]	PARK J K, LEE H J, LEE W S, et al. Effect of TiAl-based interlayer on the surface morphology and adhesion of nanocrystalline diamond film deposited on WC-Co substrate by hot filament CVD [J]. Surface and Coatings Technology,2014,258:108-113. doi: 10.1016/j.surfcoat.2014.09.053
[12]	FISCHER M, CHANDRAN M, AKHVLEDIANI R, et al. Interplay between adhesion and interfacial properties of diamond films deposited on WC-10%Co substrates using a CrN interlayer [J]. Diamond and Related Materials,2016,70:167-172. doi: 10.1016/j.diamond.2016.10.021
[13]	LI X, WANG C C, CHEN C K, et al. Thickness-controllable diamond films deposited on stainless steel using a Cr/Cr-Si-N interlayer prepared at different N₂/Ar flow ratios [J]. Applied Surface Science,2020,532:1-10.
[14]	LYU F, LI X, CHEN C K, et al. High adhesion diamond films deposited on stainless steel by using nanocomposite films with mosaic interface as an interlayer [J]. Applied Surface Science,2020,528:1-10.
[15]	李晓, 刘成, 陈道勇, 等. 过渡层Cr/Cr-Si中Si含量对不锈钢表面生长金刚石薄膜的影响 [J]. 硅酸盐学报,2020,48(4):608-614. doi: 10.14062/j.issn.0454-5648.20190631 LI Xiao, LIU Cheng, CHEN Daoyong, et al. Effect of Si content on Cr/Cr-Si interlayer on diamond film growth on stainless steel surface [J]. Journal of the Chinese ceramic society,2020,48(4):608-614. doi: 10.14062/j.issn.0454-5648.20190631
[16]	RALCHENKO V G, SMOLIN A A, PEREVERZEV V G, et al. Diamond deposition on steel with CVD tungsten intermediate layer [J]. Diamond and Related Materials,1995,4(5/6):754-758.
[17]	CHANDRAN M, SAMMLER F, UHLMANN E, et al. Wear performance of diamond coated WC-Co tools with a CrN interlayer [J]. Diamond and Related Materials,2017,73:47-55. doi: 10.1016/j.diamond.2016.12.001
[18]	PICKRELL D J, KLINE K A, TAYLOR R E. Thermal-expansion of polycrystalline diamond produced by chemical-vapor-deposition [J]. Applied Physics Letters,1994,64(18):2353-2355. doi: 10.1063/1.111612
[19]	PIERSON H O. Handbook of refractory carbides and nitrides [M]. Holland: Elsevier Science, 1996.
[20]	GAO J, HEI H J, ZHENG K, et al. Design and synthesis of diffusion-modified HfC/HfC-SiC bilayer system onto WC-Co substrate for adherent diamond deposition [J]. Journal of Alloys and Compounds,2017,705:376-383. doi: 10.1016/j.jallcom.2016.10.316
[21]	SAILS S R, GARDINER D J, BOWDEN M, et al. Monitoring the quality of diamond films using Raman spectra excited at 514.5 nm and 633 nm [J]. Diamond and Related Materials,1996,5(6/7/8):589-591.
[22]	VIDAKIS N, ANTONIADIS A, BILALIS N. The VDI 3198 indentation test evaluation of a reliable qualitative control for layered compounds [J]. Journal of Materials Processing Technology,2003,143/144:481-485.
[23]	郭涛. 脆性薄膜的失效及其对基体的影响 [D]. 北京: 北京科技大学, 2018. GUO Tao. The failure of brittle film and its influence on the underlying substrate [D]. Beijing: University of Science and Technology Beijing, 2018.