Performance of thermal field-assisted precision lapping for single crystal sapphire wafers
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摘要: 针对传统蓝宝石晶圆精磨加工表面质量差、效率低下的难题，提出热场辅助蓝宝石晶圆加工技术，研究热场辅助对蓝宝石晶圆精研加工性能的影响。通过自行设计的热场辅助装置控制加工区温度，基于半固结柔性磨具，在不同加工区温度条件下对蓝宝石晶圆进行精研加工，对比分析加工区温度对其加工性能的影响，并深入探讨材料去除机理。仿真结果表明，自行设计的热场辅助装置可使精研加工区迅速达到设定温度，且整个过程中晶圆的温度差＜1.3 ℃。与室温下的加工结果相比，当加工区温度控制在50.0 ℃时，蓝宝石晶圆的表面粗糙度下降了6%，材料去除率提高了近114.2%。磨屑检测结果表明，提高加工区温度后，晶圆表面材料在去除过程中发生晶态结构转变，提高了蓝宝石加工过程中的水合反应速率，从而提高了材料去除率。热场辅助蓝宝石晶圆精研加工可同时获得较高的表面质量和加工效率，具有广阔的应用前景。Abstract: To address the issues of poor surface quality and low efficiency in conventional sapphire wafer lapping processing, a thermal field-assisted processing technology was proposed. The influence of thermal field-assistance on sapphire wafer lapping performance was investigated. While controlling the temperature of the processing area with a self-designed thermal field-assisted device, the lapping tests of sapphire wafers were performed under different processing area temperatures using a semi-fixed flexible machining tool. The effect of processing area temperature on lapping performance was thoroughly examined, along with the material removal mechanism. The simulation results show that the processing area can be quickly heated by a self-designed thermal field-assisted device, and the temperature difference between different areas of the wafer is less than 1.3℃. When the processing area temperature was controlled at 50℃, the surface roughness of sapphire wafers decreased by 6%, and the material removal rate (MRR) improved by nearly 114.2% compared to room temperature. The wear debris test results show that with the increase in processing area temperature during the removal process, the crystal structure of the wafer surface material changed, leading to an improved hydration reaction rate during processing and resulting in a high MRR. Thermal field-assisted precision lapping of sapphire wafers can achieve high surface quality while also increasing processing efficiency, which has a wide range of applications.
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Key words:
- sapphire wafer /
- thermal field-assisted /
- precision lapping /
- surface roughness /
- removal mechanism
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图 1 自行设计的热场辅助装置结构
Figure 1. Structure diagram of self-designed thermal field-assisted device
图 4 载物盘和蓝宝石晶圆的温度分布图
Figure 4. Wafer carrier and sapphire wafer temperature contour maps
图 6 晶圆在升温过程的温度变化曲线图
Figure 6. Temperature change curve of wafer during the heating process
图 7 不同精研加工时间蓝宝石晶圆的表面粗糙度
Figure 7. Surface roughness of sapphire wafer at different polishing time
图 8 蓝宝石晶圆在不同加工区温度下精研加工的材料去除率
Figure 8. MRR of precision lapping on sapphire wafer at different processing area temperatures
图 9 22 ℃ 加工后冷却液中蓝宝石晶圆的磨屑的形貌、高分辨像、衍射花样和能谱检测结果
Figure 9. Topography, HRTEM images, SAED patterns and EDS spectra of wear debris in the coolant when sapphire wafer after processing at 22 ℃
图 10 30 ℃ 加工后冷却液中蓝宝石晶圆的磨屑的形貌、高分辨像、衍射花样和能谱检测结果
Figure 10. Topography, HRTEM images, SAED patterns and EDS spectra of wear debris in the coolant when sapphire wafer after processing at 30 ℃
图 11 50 ℃ 加工后冷却液中蓝宝石晶圆的磨屑的形貌、高分辨像、衍射花样和能谱检测结果
Figure 11. Topography, HRTEM images, SAED patterns and EDS spectra of wear debris in the coolant when sapphire wafer after processing at 50 ℃
图 12 70 ℃ 加工后冷却液中蓝宝石晶圆的磨屑的形貌、高分辨像、衍射花样和能谱检测结果
Figure 12. Topography, HRTEM images, SAED patterns and EDS spectra of wear debris in the coolant when sapphire wafer after processing at 70 ℃
表 1 材料性能参数
Table 1. Parameters of material property
材料 密度ρ/
(kg·m−3)弹性模量E/ (N·m−2) 泊松比μ 比热容C/ (J·kg−1·K−1) 热导率 λ/ (W·m−1·K−1) 蓝宝石 3 975 3.8 × 1011 0.29 782 24.00 镍铬合金 8 400 2.1 × 1011 0.25 460 15.00 云母 2 450 2.1 × 106 0.18 2 422 0.43 304 7 900 1.9 × 1011 0.30 480 16.20 1Cr13 7 750 2.2 × 1011 0.30 473 25.10 
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表 2 单晶蓝宝石晶圆精研加工工艺参数
Table 2. Precision lapping process parameters of single crystal sapphire wafer
加工参数 条件 载物盘转速 v/（ r·min−1） 60 磨具转速 f /（ r·min−1） 120 工作压力F/Pa 5 冷却液 去离子水 加工时间 t/ min 120 加工温度 θ/ ℃ 22，30，50，70 冷却液温度 θ1 / ℃ 22，30，50，70
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