Effect of environmental friendly complexing agent and oxidant on CMP of aluminium alloy under low pressure
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摘要: 在低平坦化压力下用壳寡糖(COS)环保型络合剂及H2O2氧化剂化学机械抛光铝合金,用原子力显微镜观测抛光后的表面质量,并用X射线光电子能谱仪分析其表面的钝化膜元素,用纳米压痕仪分析钝化膜的力学性能,研究COS及H2O2对铝合金CMP的作用机理。结果表明:H2O2质量分数为2%时,材料去除率随COS含量的增加而增大,当COS质量分数为0.32%时,材料的去除速率达861 nm/min,表面粗糙度最低为2.50 nm;COS质量分数为0.50%时,材料去除率随H2O2含量的增加先增大后减小,当H2O2质量分数为1.2%时,材料的抛光去除速率达840 nm/min,同时其表面粗糙度为3.52 nm。加入COS络合剂会在铝合金表面形成主要成分为Al-COS、Al2O3和Al(OH)3的弱钝化膜。Abstract: Effects of oxidizer hydrogen peroxide(H2O2)and complexing agent chitosan oligosaccharide(COS)on material removal of aluminium alloy were investigated in alkaline slurry by using atomic force microscope(AFM), X-ray photoelectron spectroscopy(XPS)and nanoindentation tests.In addition, the chemical effect of H2O2 and COS occurred in CMP process was discussed.The results show that the material removal rate increased as the COS concentration increased when the mass concentration of H2O2 was 2%.It can obtain remarkably smooth surface Ra=2.5 nm and 861 nm/min removal rate when the mass concentration of COS reached 0.32%.The material removal rate was enhanced by the increase of H2O2 concentration when the mass concentration of COS was 0.5%.After reaching the maximum value, the material removal rate began to decrease.The surface roughness was 3.52 nm and the material removal rate was 840 nm/min when the mass concentration of H2O2 reached 1.2%.A weak passive layer is mainly consisted by Al-COS、Al2O3 and Al(OH)3 when COS was added.
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