划片刀配方对砷化镓晶圆切割崩裂的影响

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基金项目:

国家自然科学基金(71571168)。

Effect of dicing blade formulation on chipping and cracking of GaAs wafers

1. School of Management Engineering, Zhengzhou University, Zhengzhou 450001, China;
2. State Key Laboratory of Superabrasives, Zhengzhou 450001, China;
3. Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd., Zhengzhou 450001, China

摘要: 利用试验设计方法(design of experiment, DOE)，以不同配方的划片刀划切砷化镓晶圆，并检测其正、背、侧面的崩裂尺寸，找出划片刀配方对砷化镓晶圆切割崩裂尺寸的影响规律。研究表明：划片刀的磨料粒度与砷化镓晶圆切割质量密切相关，即磨料粒度越细，正、背、侧面崩裂尺寸越小；而磨料浓度和结合剂强度与砷化镓晶圆正、背、侧面的切割质量相关性并不显著。可通过缩小磨粒尺寸的方式提高划切质量，并视情况调整磨料浓度和结合剂强度。
- 试验设计 /
- 砷化镓晶圆 /
- 切割崩裂 /
- 划片刀
Abstract: The effect law of dicing blade formulations on the chipping and cracking quality of GaAs wafers was studied by designing of experiment method, which is to cut wafers through blades with different formulations, and to test the crack size on the top, back or side faces.The results show that the abrasive grain size of the blade is closely related to the cutting quality of GaAs wafer.The finer the abrasive grain size, the smaller the size of the cracks on the top, back or side.The correlation of abrasive concentration or bond strength to GaAs wafer cutting quality is not significant.Therefore, the cutting quality could be enhanced by adopting smaller abrasive and adjusting abrasive concentration and bond strength.
- design of experiment /
- GaAs wafer /
- cutting crack /
- dicing blade