Development of boron and its synergistic doped diamond blocks
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摘要: 掺入硼等杂质元素可以使金刚石获得半导体特性,利用高温高压法可以制备出性能优良的金刚石半导体材料。本文介绍了硼及其协同掺杂金刚石块体材料的研究现状,综述了掺杂对金刚石的形貌、结构及性能的影响,阐明了制备过程中影响掺杂金刚石质量的因素,展望了硼及其协同掺杂金刚石块体材料的应用前景。Abstract: The semiconductor properties of diamond can be obtained by adding impurity elements like boron. Diamond semiconductor materials with excellent properties can be prepared by high temperature and pressure method. This paper introduces the research development of boron and its co-doped diamond block materials. It summarizes the influence of doping on the morphology, structure and properties of diamond. The factors that affect the quality of doped diamond under high temperature and pressure are clarified. In the end, this paper looks forward to the application prospect of boron and its co-doped diamond block materials.
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