硼及其协同掺杂金刚石薄膜的研究

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基金项目:

河北省首批青年拔尖人才计划”(冀办字[2013]19号)资助。

Study on boron and its co-doped diamond films

1. School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, Hebei, China;
2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China

摘要: 在金刚石中掺入杂质元素会在保留其原有优良性能的基础上获得其他性能，如掺入硼元素可以使金刚石成为P型半导体；协同掺杂其他元素可以改善金刚石的电学性能、催化活性等，甚至可以改变硼掺杂金刚石薄膜的导电机制。本文详细介绍了硼及其协同掺杂金刚石薄膜的制备方法、结构特点以及微观形貌，综述了影响其性能的因素及改性方法。
- 金刚石薄膜 /
- 硼及其协同掺杂 /
- 电学性能 /
- 改性方法
Abstract: Adding impurity elements into diamond can obtain other properties on the basis of retaining its original excellent properties, for example, doping boron element can make diamond become P-type semiconductor. Co-doping other elements can improve the electrical properties and catalytic activity of diamond, and even change the conductive mechanism of boron-doped diamond films. In this paper, the preparation methods, structural characteristics and micro-morphology of boron and its co-doped diamond films are introduced in detail. The factors affecting the properties of boron and its co-doped diamond films and the modification methods are summarized.
- diamond film /
- boron and its co-doping /
- electrical properties /
- modification method