Experiment on single diamond abrasive scratching 2D SiCf/SiC composite materials
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摘要: 为了揭示2D SiCf/SiC复合材料的磨削去除机理,根据2D SiCf/SiC复合材料的编织结构特点,分别在2D SiCf/SiC纤维的编织表面(woven surface, WS)和叠加表面(stacking surface, SS)沿0°、45°和90°方向开展单颗金刚石磨粒划擦实验,测量其划擦力和划痕深度,并观察划痕表面形貌。结果表明:在WS0(纤维编织表面的0°方向)上SiCf/SiC材料的去除方式主要为纵向纤维(纤维轴向与进给速度方向一致)的剪切、拉伸、弯曲断裂和横向纤维(纤维轴向与进给速度方向垂直)的剪切、弯曲断裂;在WS45(纤维编织表面的45°方向)上主要为纤维的剪切、弯曲、拉伸断裂;在SS0(纤维叠加表面的0°方向)上主要为法向纤维(纤维轴向垂直于划擦表面)的延性去除、剪切、弯曲断裂,纵向纤维的剪切、拉伸、弯曲断裂;在SS90(纤维叠加表面的90°方向)上主要为法向纤维的延性去除、剪切、弯曲断裂和横向纤维的剪切、弯曲、拉伸断裂。由于SiC纤维的各向异性,不同方向、不同断裂形式有不同的力学性能,剪切断裂所需要的力最小,拉伸断裂所需要的力最大。在相同划擦深度下,因WS0、WS45、SS0、SS90方向上断裂形式的不同和剪切、弯曲、拉伸断裂所占的比例不同,其划擦力大小依次为FSS0>FWS45>FSS90>FWS0。且磨粒切入复合材料后随着裂纹的扩展和相互贯通,SiC基体会一起被剥离去除,部分基体受到挤压去除后再次被磨粒划擦去除形成延性划痕。2D SiCf/SiC复合材料切削时宜选择WS0方向,而尽量避开SS0方向。
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关键词:
- 单颗金刚石磨粒划擦 /
- SiCf/SiC复合材料 /
- 纤维取向 /
- 划擦力 /
- 表面形貌
Abstract: To reveal the grinding removal mechanism of 2D SiCf/SiC composites, according to the weaving structure characteristics of 2D SiCf/SiC composites, scratching experiments were conducted on the woven surface (WS) and stacking surface (SS) of 2D SiCf/SiC along 0°, 45°, and 90° directions. The experiments measured the scratching force and scratching depth and observed the scratching surface morphology. The results show that the removal modes for the SiCf/SiC material on WS0 (0° direction of fiber woven surface) are mainly shear, tensile, and bending fracture of longitudinal fibers (ie. the fiber axis is consistent with the feed rate direction), and shear, bending, and tensile fracture of transverse fibers (ie. the fiber axis is perpendicular to the feed rate direction). On WS45 (45° direction of fiber woven surface), the main removal modes are shear, bending, and tensile fracture. On SS0 (0° direction of fiber stacking surface), the main removal modes are extrusion and bending fractures of normal fibers (ie. the fiber axis is perpendicular to the scratching surface), as well as shear, tensile, and bending fractures of longitudinal fibers. On SS90 (90° direction of fiber stacking surface), the main removal modes are ductile removal, shear and bending fractur of normal fibers, and shear, bending, and tensile fracture of transverse fibers. Due to the anisotropy of SiC fibers, different directions and fracture modes exhibit varying mechanical properties. Shear fracture requires the least force, while tensile fracture requires the most force. At the same scratch depth, due to the different fracture modes in the WS0, WS45, SS0, and SS90 directions and varying proportions of shear, bending, and tensile fractures, the order of scratch forces is FSS0 > FWS45 > FSS90 > FWS0. When abrasive particles penetrate the composite material, the SiC matrix is peeled off and removed along with crack expansion and mutual penetration. Part of the matrix is removed by compression and then re-scratched by abrasive particles to form ductile scratches. When cutting 2D SiCf/SiC composite materials, it is advisable to choose the WS0 direction and avoid the SS0 direction as much as possible. -
表 1 划擦前后金刚石表面形貌
Table 1. Surface morphology of diamond before and after scratching
划擦前 划擦后 -
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