Effect of boron concentration and gas pressure on the electrochemical oxidation performance changes of HFCVD diamond films on Ti substrates
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摘要: 系统探究在HFCVD生长掺硼金刚石过程中,掺硼浓度与沉积气压对Ti基掺硼金刚石薄膜的微观结构与电化学氧化性能的影响。并以四环素作为模拟污染物进行电化学氧化降解实验。使用扫描电子显微镜、拉曼光谱、紫外分光光度计以及电化学工作站对电极表面形貌、成分以及电化学性能进行表征。结果表明:随着掺硼浓度与沉积气压的增大,金刚石薄膜表面晶粒明显细化,生长速率下降;然而随着气压的升高,金刚石的晶粒质量逐渐降低,但硼原子掺杂则会提高金刚石晶粒质量;高掺硼浓度低气压的条件下,金刚石薄膜表面的硼原子浓度更高;高掺硼浓度的BDD电极具有更优越的电化学性能,更高的降解效率以及更低的降解能耗。
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关键词:
- 钛基掺硼金刚石薄膜电极 /
- 电化学氧化 /
- 掺硼浓度 /
- 沉积气压 /
- 四环素
Abstract: The effects of boron concentration and deposition pressure on the microstructure and electrochemical oxidation performance of Ti/BDD electrodes during HFCVD growth were systematically investigated. The surface morphology, composition and electrochemical performance of the electrode were characterized by Scanning electron microscope (SEM), Raman spectroscopy, ultraviolet spectrophotometer, and electrochemical workstation. Tetracycline was used as a simulated pollutant to explore the electrochemical oxidation degradation performance of BDD electrodes prepared with different boron concentration and deposition pressure. With the increase of air pressure, the grain quality of the diamond decreases gradually, but the boron atom doping will improve the grain quality of the diamond. Under the condition of high boron concentration and low pressure, the boron atom concentration on the surface of diamond film is higher, and the electrode with high boron atom concentration has better electrochemical performance, higher degradation efficiency, and lower degradation energy consumption.
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