Process research on ultrasonic vibration assisted lapping of single crystal silicon carbide
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摘要: 针对传统研磨方法加工单晶碳化硅晶片存在的材料去除率低、磨料易团聚等问题，本文提出超声振动辅助研磨方法，并探究不同工艺参数（转速、磨料质量分数、抛光压力、磨料粒径）对单晶碳化硅晶片研磨效率和表面质量的影响规律。试验结果和理论分析表明：超声振动有效提高了单晶碳化硅晶片研磨的材料去除率；在研磨盘转速为50 r/min，磨料质量分数为2.5%，压力为0.015 MPa，磨料粒径为0.5 μm时超声振动对材料去除率的提升效果最明显，分别提升23.4%，33.8%，72.3%，184.2%。同时，通过对研磨过程中表面粗糙度的追踪检测，能确定不同粒径磨料超声振动辅助研磨的最佳时间。Abstract: Aimming at the problems such as low material removal rate and abrasive agglomeration when polishing single crystal silicon carbide wafers with traditional methods, this study proposed a ultrasonic vibration assisted lapping method. It studied the influence of different process parameters including speeds, abrasive concentrations, pressures and abrasive grain sizes on the lapping efficiency and lapping quality of single crystal silicon carbide wafers. The experimental results and theoretical analysis show that ultrasonic vibration effectively improves the material removal rate of single crystal silicon carbide wafer polishing. When the lapping disc speed is 50 r/min, the lapping fluid concentration is 2.5%, the pressure is 0.015 MPa and the abrasive grain size is 0.5 μm, the effect of improving the material removal rate is the most obvious, thus increased by 23.4%, 33.8%, 72.3% and 184.2% respectively. At the same time, by tracking and testing the surface roughness during the lapping process, the best time for ultrasonic vibration-assisted grinding of abrasives with different particle sizes was determined.
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Key words:
- ultrasonic vibration /
- silicon carbide /
- polishing /
- material removal rate
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图 1 压电陶瓷片逆压电效应示意图
Figure 1. Schematic diagram of inverse piezoelectric effect of piezoelectric ceramic sheet
图 9 不同磨料质量分数时试件的材料去除率
Figure 9. Material removal rate of specimens at different abrasive concentrations
图 10 不同压力时试件的材料去除率
Figure 10. Material removal rate of specimens under different lapping pressures
图 12 不同粒径金刚石磨料研磨碳化硅晶片表面粗糙度变化
Figure 12. Surface roughness of silicon carbide wafers varing with different diamond grit sizes
图 13 不同磨料研磨后碳化硅晶片表面形貌
Figure 13. Surface morphology of silicon carbide wafer after lapping with different abrasives
表 1 研磨试验方案
Table 1. Test program of lapping experiment
试验组别 工艺条件 研究变量 变量取值 1 d=5.0 μm，
ω=5.0%，
p=0.010 MPa研磨盘转速
n1 / (r·min−1)30，40，
50，602 d=5.0 μm，
p=0.010 MPa，
n1=50 r/min磨料质量
分数ω/ % 2.5，5.0，
7.5，10.03
ω=5.0%，
n1=50 r/min，d=5.0 μm压力 p / MPa 0.010，0.015，0.020，0.025 4 ω=5.0%，p =0.010 MPa，
n1=50 r/min磨料粒径
d / μm0.5，2.0，5.0 
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表 2 不同研磨转速下试件研磨前后质量
Table 2. Mass of test pieces before and after grinding at different rotational speeds
研磨盘转速
n1 / (r·min−1)研磨前试件质量
m0 / g研磨后试件质量
m1 / g无超声振
动辅助有超声振
动辅助无超声振
动辅助有超声振
动辅助30 4.563 2 4.582 5 4.548 3 4.565 6 40 4.563 0 4.582 0 4.542 6 4.559 4 50 4.562 7 4.581 7 4.528 1 4.539 0 60 4.563 0 4.582 2 4.513 6 4.528 4
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表 3 不同磨料质量分数条件下试件研磨前后质量
Table 3. Mass of test pieces before and after grinding at different abrasive concentrations
磨料质量分数
ω / %研磨前试件质量
m0 / g研磨后试件质量
m1 / g无超声
振动辅助有超声
振动辅助无超声
振动辅助有超声
振动辅助2.5 4.556 7 4.583 2 4.527 1 4.543 6 5.0 4.562 7 4.581 7 4.528 1 4.539 0 7.5 4.564 2 4.582 2 4.525 4 4.534 1 10.0 4.558 3 4.582 0 4.534 5 4.550 3
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表 4 不同研磨压力条件下试件研磨前后质量
Table 4. Mass of test pieces before and after grinding at different lapping pressures
压力
p / MPa研磨前试件质量
m0 / g研磨后试件质量
m1 / g无超声
振动辅助有超声
振动辅助无超声
振动辅助有超声
振动辅助0.010 4.562 7 4.5817 4.5281 4.539 0 0.015 4.559 6 4.581 1 4.522 1 4.516 5 0.020 4.558 5 4.579 8 4.482 3 4.483 2 0.025 4.561 3 4.578 3 4.463 8 4.425 3
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表 5 不同磨料粒径条件下试件研磨前后质量
Table 5. Mass of test pieces before and after grinding at different grit sizes
磨料粒径
d / μm研磨前试件质量
m0 / g研磨后试件质量
m1 / g无超声
振动辅助有超声
振动辅助无超声
振动辅助有超声
振动辅助5.0 4.562 7 4.5817 4.5281 4.539 0 2.0 4.553 8 4.580 5 4.543 7 4.563 9 0.5 4.561 1 4.578 8 4.559 2 4.573 4
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